MRF10005 |
Part Number | MRF10005 |
Manufacturer | Tyco |
Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10005/D The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mod... |
Features |
e 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 1.25 25 143 –65 to +200 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 7.0 Unit °C/W NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 1 ELECTRICAL CHARACTERISTICS (TC = 25°C un... |
Document |
MRF10005 Data Sheet
PDF 160.25KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
2 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors | |
3 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
4 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
5 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR |