Toshiba Semiconductor TH5 fiche technique

No.	Partie #	Fabricant	Description
1	TH58NVG4S0FTA20	Toshiba Semiconductor	16 GBIT (2G x 8 BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block
2	TH58NVG1S3AFT05	Toshiba Semiconductor	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply
3	TH58NVG5S0FTA20	Toshiba Semiconductor	32-GBIT (4G x 8 BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 4328 × 256K × 8 × 4 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block
4	TH58NVG5S0FTAK0	Toshiba Semiconductor	32 GBIT (4G x 8 BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 4328 × 256K × 8 × 4 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block
5	TH50VSF3680	Toshiba Semiconductor	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE • • • Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block
6	TH50VSF3681AASB	Toshiba Semiconductor	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE • • • Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block
7	TH58100FT	Toshiba Semiconductor	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS · Organization Memory cell allay 528 ´ 128K ´ 8 ´ 2 Register 528 ´ 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/
8	TH58V128DC	Toshiba Semiconductor	128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
9	TH58V128FT	Toshiba Semiconductor	128Mbit (16M x 8bit) CMOS NAND E2PROM
10	TH58100FTI	Toshiba Semiconductor	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS • Organization Memory cell allay 528 × 128K × 8 × 2 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/
11	TH50VSF2580AASB	Toshiba Semiconductor	SRAM AND FLASH MEMORY MIXED MULTI-CHIP Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf • Data retention supply voltage VCCs = 1.5 V~3.6 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maxim
12	TH50VSF2581AASB	Toshiba Semiconductor	SRAM AND FLASH MEMORY MIXED MULTI-CHIP Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf • Data retention supply voltage VCCs = 1.5 V~3.6 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maxim
13	TH50VSF2582AASB	Toshiba Semiconductor	SRAM AND FLASH MEMORY MIXED MULTI-CHIP Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf • Data retention supply voltage VCCs = 1.5 V~3.6 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maxim
14	TH50VSF2583AASB	Toshiba Semiconductor	SRAM AND FLASH MEMORY MIXED MULTI-CHIP Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf • Data retention supply voltage VCCs = 1.5 V~3.6 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maxim
15	TH50VSF3582AASB	Toshiba Semiconductor	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com • Data retention supply voltage VCCs = 1.5 V~3.3 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA ma
16	TH50VSF3583AASB	Toshiba Semiconductor	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com • Data retention supply voltage VCCs = 1.5 V~3.3 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA ma