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TH50VSF3582AASB |
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| Part Number | TH50VSF3582AASB |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory co... |
| Features |
Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com • Data retention supply voltage VCCs = 1.5 V~3.3 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) • Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes • Organization • CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152 words of 16 bits 4,194,304 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits • • • • • PIN ASSIGNMENT (TOP VIEW)... |
| Document |
 TH50VSF3582AASB Data Sheet
PDF 611.07KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TH50VSF3583AASB |
Toshiba Semiconductor |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
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| 2 | TH50VSF3680 |
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
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| 3 | TH50VSF3681AASB |
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
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| 4 | TH50VSF2580AASB |
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
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| 5 | TH50VSF2581AASB |
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
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