| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Phase Control Thyristor |
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Toshiba Semiconductor |
(SF3GZ47 / SF3JZ47) THYRISTOR SILICON DIFFUSED TYPE |
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Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE • • • Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block |
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Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE • • • Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block |
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Toshiba Semiconductor |
Thyristor sipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM |
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Toshiba Semiconductor |
Thyristor sipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM |
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Toshiba Semiconductor |
(SF3x48) THYRISTOR SILICON PLANAR TYPE sipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM |
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Toshiba Semiconductor |
(SF3x48) THYRISTOR SILICON PLANAR TYPE sipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM |
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Toshiba Semiconductor |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com • Data retention supply voltage VCCs = 1.5 V~3.3 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA ma |
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Toshiba Semiconductor |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com • Data retention supply voltage VCCs = 1.5 V~3.3 V • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA ma |
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Toshiba Semiconductor |
(SF3GZ47 / SF3JZ47) THYRISTOR SILICON DIFFUSED TYPE |
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