| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Silicon NPN Transistor ff current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 |
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Toshiba Semiconductor |
Silicon NPN Transistor ff current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 |
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Toshiba Semiconductor |
Silicon NPN Transistor tor cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN100 |
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Toshiba Semiconductor |
Silicon NPN Transistor ff current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 |
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Toshiba Semiconductor |
Silicon NPN Transistor est Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = −10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ |
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Toshiba Semiconductor |
Silicon NPN Transistor ncy Collector output capacitance RN1241 Input resistor RN1242 RN1243 RN1244 R1 Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit ― ― ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide |
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Toshiba Semiconductor |
Silicon NPN Transistor tor cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN100 |
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Toshiba Semiconductor |
Silicon NPN Transistor tor cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN100 |
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Toshiba Semiconductor |
Silicon NPN Transistor tor cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN100 |
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Toshiba Semiconductor |
Silicon NPN Transistor tor cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN100 |
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Toshiba Semiconductor |
Silicon NPN Transistor ff current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 |
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Toshiba Semiconductor |
Silicon NPN Transistor ff current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 |
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Toshiba Semiconductor |
Silicon NPN Transistor 1-06-07 RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1221~1227 RN1221 RN1222 RN1223 Emitter cut-off current RN1224 RN1225 RN1226 RN1227 RN1221 RN1222 RN1223 DC cur |
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Toshiba Semiconductor |
Silicon NPN Transistor ncy Collector output capacitance RN1241 Input resistor RN1242 RN1243 RN1244 R1 Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit ― ― ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE |
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Toshiba Semiconductor |
Silicon NPN Transistor or cut-off current RN1414~1418 RN1414~1418 RN1414 RN1415 Emitter cut-off current RN1416 RN1417 RN1418 DC current gain Collector-emitter saturation voltage RN1414~16, 18 RN1417 RN1414~1418 RN1414 RN1415 Input voltage (ON) RN1416 RN1417 RN1418 RN1414 R |
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Toshiba Semiconductor |
Silicon NPN Transistor or cut-off current RN1414~1418 RN1414~1418 RN1414 RN1415 Emitter cut-off current RN1416 RN1417 RN1418 DC current gain Collector-emitter saturation voltage RN1414~16, 18 RN1417 RN1414~1418 RN1414 RN1415 Input voltage (ON) RN1416 RN1417 RN1418 RN1414 R |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide |
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