RN1210 |
Part Number | RN1210 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. ... |
Features |
est Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = −10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ
1
2001-06-07
RN1210,RN1211
2
2001-06-07
RN1210,RN1211
3
2001-06-07
RN1210,RN1211
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerabi... |
Document |
RN1210 Data Sheet
PDF 165.61KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1211 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | RN1201 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | RN1202 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | RN1203 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
5 | RN1204 |
Toshiba Semiconductor |
Silicon NPN Transistor |