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Toshiba Semiconductor |
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION · · Low Noise Figure :NF=1.1dB (@f=2GHz) High Gain:|S21e| =12.0dB (@f=2GHz) 2 Marking 3 R4 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dis |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ¾ 8.5 ¾ Typ. 4.5 8.5 11.5 1.4 Max ¾ ¾ ¾ 2.2 Unit GHz dB dB Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Conditi |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION · · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =10dB (@f=2GHz) 2 Marking 3 Q7 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissi |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor ay cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor ure/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabi |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Se |
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Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) C |
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Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor • Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62 TOSHIBA 2-5K1A Wei |
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Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor • Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base volta |
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Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL TYPE |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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