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MT3S12T |
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| Part Number | MT3S12T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • Superior performance in oscillator applications. • Sup... |
| Features |
ure/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
3
TJ
12
1 2007-11-01
Microwave Characteristics (Ta = 25°C)
Characteristic Transition frequency Insertion gain Noise figure
Symbol
Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF (1)
VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 G... |
| Document |
 MT3S12T Data Sheet
PDF 128.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MT3S12FS |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|
| 2 | MT3S106FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 3 | MT3S107FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 4 | MT3S108FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 5 | MT3S111 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|