| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
2SK2996 ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te |
|
|
|
|
Toshiba Semiconductor |
2SK2962 eavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cur |
|
|
|
|
Toshiba Semiconductor |
2SK2961 e in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabi |
|
|
|
|
Toshiba Semiconductor |
2SK2917 y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren |
|
|
|
|
Toshiba Semiconductor |
2SK2915 sing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. |
|
|
|
|
Toshiba Semiconductor |
2SK2968 s Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 83. Max 25 3 Unit °C / W °C / W Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
|
|
|
Toshiba Semiconductor |
2SK2953 |
|
|
|
|
Toshiba Semiconductor |
2SK2995 o case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 41. Max 39 6 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET sing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor ote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor ant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the approp |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i. |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor even if the operating conditions (i.e. operating temperature/current/voltage, JEITA TOSHIBA — 2-5J1C etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Weight: 0.36 g |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
|
|
|
Toshiba Semiconductor |
2SK2967 ontinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat |
|
|
|
|
Toshiba Semiconductor |
2SK2986 |
|
|
|
|
Toshiba Semiconductor |
2SK2993 case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 83. Max 25 3 Unit °C / W °C / W Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 |
|