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K2968 |
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| Part Number | K2968 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance l High forward transfe... |
| Features |
s Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.9 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-07-31
2SK2968
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Gate−source breakdown voltage Drain cut... |
| Document |
 K2968 Data Sheet
PDF 247.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2960 |
Panasonic |
Silicon N-Channel Power F-MOS FET |
|
| 2 | K2960TC450 |
IXYS |
Medium Voltage Thyristor |
|
| 3 | K2960TC460 |
IXYS |
Medium Voltage Thyristor |
|
| 4 | K2960TC480 |
IXYS |
Medium Voltage Thyristor |
|
| 5 | K2960TC500 |
IXYS |
Medium Voltage Thyristor |
|