No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Dual Bus Switch • • • • • • Operating voltage: VCC = 4.5~5.5 V High speed operation: tpd = 0.25 ns (max) Ultra-low on resistance: RON = 5 Ω (typ.) Electro-static discharge (ESD) performance: ±200 V or more (JEITA) ±2000 V or more (MIL) TTL level input (control input |
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Toshiba Semiconductor |
Silicon NPN Transistor rature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual r |
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Toshiba Semiconductor |
Silicon NPN Transistor onductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 Electrical Characteristics (Ta = 25°C) Characteris |
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Toshiba Semiconductor |
2SD1223 conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
Silicon NPN Transistor tter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Mi |
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Toshiba Semiconductor |
Dual Bus Switch • Operating voltage: VCC = 4.5 to 5.5 V • High speed operation: tpd = 0.32 ns (max) • Ultra-low on resistance: RON = 5 Ω (typ.) • ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V • TTL level input (control input) • Low Power Dissipa |
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Toshiba Semiconductor |
Dual Bus Switch • • • • • • Operating voltage: VCC = 4.5~5.5 V High speed operation: tpd = 0.25 ns (max) Ultra-low on resistance: RON = 5 Ω (typ.) Electro-static discharge (ESD) performance: ±200 V or more (JEITA) ±2000 V or more (MIL) TTL level input (control input |
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Toshiba Semiconductor |
NPN Transistor |
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Toshiba Semiconductor |
Dual Bus Switch • Operating voltage: VCC = 4.5 to 5.5 V • High speed operation: tpd = 0.32 ns (max) • Ultra-low on resistance: RON = 5 Ω (typ.) • ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V • TTL level input (control input) • Low Power Dissipa |
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Toshiba Semiconductor |
31cm COLOUR TFT-LCD MODULE (1) (2) (3) (4) 12.1”XGA(1024x768 pixels) display size for Tablet PC Light weight and Thinner design LVDS interface system (H-Sync, V-Sync) Digitizer Easy Insertion & Assembly Solution TENTATIVE MECHANICAL SPECIFICATIONS Item Dimensional Outline (t |
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Toshiba Semiconductor |
NPN TRANSISTOR conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept |
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Toshiba Semiconductor |
2SD1294 |
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