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2SD1223 |
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| Part Number | 2SD1223 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • • • High DC... |
| Features |
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR BASE ≈ 4.5 kΩ ≈ 300 Ω EMITTER
1
2010-02-05
Free Datasheet http://www.Datasheet4U.com
2SD1223
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector... |
| Document |
 2SD1223 Data Sheet
PDF 170.61KB |
| Distributor | Stock | Price | Buy |
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