| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SA1160 gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the |
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Toshiba Semiconductor |
TRANSISTOR viewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) |
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Toshiba Semiconductor |
TRANSISTOR within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability tes |
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Toshiba Semiconductor |
2SA1162 iability significantly even if the operating conditions (i.e. Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semico |
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Toshiba Semiconductor |
Panel Circuit Indicator iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handboo |
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Toshiba Semiconductor |
2SA1150 viewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) |
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Toshiba Semiconductor |
2SA1163 rating conditions (i.e. TOSHIBA 2-3F1A Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability H |
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Toshiba Semiconductor |
Silicon PNP Transistor e/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum |
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Toshiba Semiconductor |
Panel Circuit Indicator ability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook |
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Toshiba Semiconductor |
Panel Circuit Indicator iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handboo |
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Toshiba Semiconductor |
Panel Circuit Indicator iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handboo |
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Toshiba Semiconductor |
Panel Circuit Indicator iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handboo |
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Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the |
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Toshiba Semiconductor |
Silicon PNP Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (ty |
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Toshiba Semiconductor |
Silicon PNP Transistor g continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. ope |
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Toshiba Semiconductor |
Panel Circuit Indicator iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handboo |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 10 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: I |
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