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Toshiba Semiconductor |
P-Channel MOSFET lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET oduct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic |
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Toshiba Semiconductor |
P-Channel MOSFET = 0, IG = 100 mA VDS = -10 V, VGS = 0 VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 mV, VGS = 0, IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Min ¾ 50 -1.2 0.3 1.0 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 4.0 270 18 3.6 |
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Toshiba Semiconductor |
2SJ516 under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperat |
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Toshiba Semiconductor |
2SJ377 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e. |
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Toshiba Semiconductor |
P-Channel MOSFET en if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions” |
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Toshiba Semiconductor |
P-Channel MOSFET eviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 Electrical Characteristics (T |
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Toshiba Semiconductor |
P-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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Toshiba Semiconductor |
P-Channel MOSFET tance Input capacitance Output capacitance Reverse transfer capacitance IGSS V (BR) DSS V GS (OFF) VDS (ON) |Yfs| Ciss Coss Qrss VDS = 0, VGS = ±20 V ID = −10 mA, VGS = 0 VDS = −10 V, ID = −10 mA ID = −0.6 A, VGS = −10 V VDS = −10 V, ID = −0.3 A VD |
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Toshiba Semiconductor |
P-Channel MOSFET 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e. |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 4.16 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch |
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Toshiba Semiconductor |
P-Channel MOSFET Note) VDS = -10 V, VGS = 0 VGS (OFF) VDS = -10 V, ID = -0.1 mA ïYfsï VDS = -10 V, VGS = 0, f = 1 kHz RDS (ON) Ciss Crss VDS = -10 mV, VGS = 0 IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Note: IDSS classification |
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Toshiba Semiconductor |
P-Channel MOSFET iability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-236MOD JEITA S |
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Toshiba Semiconductor |
P-Channel MOSFET GSS VGS = 25 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz VD |
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Toshiba Semiconductor |
P-Channel MOSFET |
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Toshiba Semiconductor |
P-Channel MOSFET te reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC- |
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Toshiba Semiconductor |
P-Channel MOSFET tions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and |
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Toshiba Semiconductor |
P-Channel MOSFET pon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25° |
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Toshiba Semiconductor |
P-Channel MOSFET riate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Charact |
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Toshiba Semiconductor |
P-Channel MOSFET ewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Chara |
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