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Toshiba |
Silicon NPN Transistor . High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max.) . Fall Time : t f =0.7/ts (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±<12 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Vo |
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Toshiba Semiconductor |
Low Voltage / Low Power CMOS 16-Bit Microcontrollers 1 • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents o |
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Toshiba |
Silicon NPN Transistor . High Voltage : VCES=1500V . Low Saturation Voltage : VcE ( sat )=lV (Max.) . Fall Time : tf=0.7/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm rl&OMAX. |
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Toshiba |
Color TV Horizontal Output Applications TICS (Tc = 25°C) CHARACTERISTICS Collector Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain SYMBOL ICBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF VCEX (sus) fT Cob tstg tf TEST CONDITION VCB = 1500 V, VBE = 0 IE = 0.4 A, IC = 0 |
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Toshiba Semiconductor |
SILICON PLANAR TYPE TRIGGER DIODE |
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Toshiba Semiconductor |
Diode the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test re |
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Toshiba Semiconductor |
Low Voltage / Low Power CMOS 16-Bit Microcontrollers 1 • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents o |
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Toshiba |
Silicon NPN Triple Diffused Type TRANSISTOR |
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Toshiba Semiconductor |
(TAR5Sxx) Point Regulators • • • • • • • Low stand-by current Overtemperature/overcurrent protection Operation voltage range is wide. Maximum output current is high. Difference between input voltage and output voltage is low. Small package. Ceramic capacitors can be used. Weig |
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Toshiba |
Digital Output Magnetic Sensor Push-Pull Output South-Pole and North-Pole Detection SON3-P-0203-1.90 Weight: 11.0 mg (typ.) SOT-23F Marking PA4 Pin Assignment (Top View) GND 3 Function Table Magnetic Flux Density ≥ BON ≤ BOFF Output L H 12 VCC(Note1） VOUT Note 1：A 0.47μF c |
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Toshiba |
Digital Output Magnetic Sensor Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg (typ.) Marking LA4 Pin Assignment (Top View) GND 3 Function Table Magnetic Flux Density ≥ BON ≤ BOFF Output L Z(Note 2) 12 VCC(Note1） VOUT Note 1：A |
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Toshiba |
Silicon NPN Transistor . High Voltage . Low Saturation Voltage . High Speed VCES=1500V VCE(sat)=4V(Typ.) tf=0.7/ts(Typ.) Built-in Damper Type. Glass Passivated Base-Collector Junction. Unit in mm 1S0MAX. 03.6±Q2 1.5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Col |
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Toshiba Semiconductor |
VARIABLE CAPACITANCE DIODE |
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Toshiba Semiconductor |
Diode , f = 1MHz ― IF = 10mA (Fig.1) Min Typ. Max Unit ― 0.60 ― ― 0.72 ― V ― 0.90 1.20 ― ― 0.1 µA ― ― 0.5 ― 0.9 3.0 pF ― 1.6 4.0 ns 961001EAA2 • TOSHIBA is continually working to improve the quality and the reliability of its products. Neverthele |
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Toshiba |
Silicon NPN Transistor . High Voltage : VC ES=1500V . High Speed : tf=0.75/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 0£6±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage (VBE=0V) Collector-Emitter Voltage (RBE=10QQ |
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Toshiba |
Silicon NPN Transistor . High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max.) . Fall Time tf=0.7/ts (Typ.) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2 MAXIMUM RATINGS (Ta=25°C) CHARACTERIS |
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Toshiba |
Schottky Barrier Diode (1) Peak forward voltage: VFM = 0.52 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin |
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Toshiba |
Schottky Barrier Diode (1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packagin |
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Toshiba |
Schottky Barrier Diode (1) Peak forward voltage: VFM = 0.6 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging |
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Toshiba |
Schottky Barrier Rectifier 3-2A1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pl |
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