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1SS200 |
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| Part Number | 1SS200 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (... |
| Features |
the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit Rating. Total Rating = Unit Rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
VF (1) VF (2) VF (3) IR (1) IR (2)
CT trr
Test Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
... |
| Document |
 1SS200 Data Sheet
PDF 173.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS201 |
Toshiba Semiconductor |
Diode |
|
| 2 | 1SS201 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 3 | 1SS220 |
NEC |
(1SS220 / 1SS221) SILICON SWITCHING DIODES |
|
| 4 | 1SS226 |
Toshiba Semiconductor |
Switching Diodes |
|
| 5 | 1SS226 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
|