| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
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Toshiba |
Silicon NPN Triple Transistor . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diods are Built-in to 1 Package. 92 80 : .Bl 01 -i .B2.pr J . in to s LLJ-ej A —054= El C2 \ 5-M4 . High DC Current Gain : hpE= 100(Min. ) (Ic=50A) . Low Saturat |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
BJT and MOS-BJT Power Module |
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Toshiba |
MOSFET Power Module |
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Toshiba |
MOSFET Power Module |
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Toshiba |
High Power Switching Application / Motor Control |
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Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
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Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
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Toshiba |
High Power Switching Application / Silicon N-Channel IGBT |
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Toshiba |
DARLINGTON POWER MODULE . The Collector is Isolated from Ground. . High DC Current Gain : hFE=100(Min. ) (Ic=50A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=50A) . High Speed : tf=2/*s(Max.) (Ic=50A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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