Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MG50G1BL2 |
Click to view a larger image
| Part Number | MG50G1BL2 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | :1 mmm A1 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. FEATURES . The Collector is Isolated from Ground. . High DC Current Gain : hFE=100(Min. ) (... |
| Features |
. The Collector is Isolated from Ground.
. High DC Current Gain : hFE=100(Min. ) (Ic=50A)
. Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=50A)
. High Speed
: tf=2/*s(Max.) (Ic=50A)
Unit in mm
MAXIMUM RATINGS (Tc=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VcBO 600 V
Collector-Emitter Voltage VCEO(SUS)
450
V
t ^P I *f*3
Emitter-Base Voltage
Vebo
6V
DC ic
50 A
Pulse
ICP
100 A
Base Current
IB 3 A
cjx
1. BASE 2. COLLECTOR 3. EMITTER
Collector Power Dissipation (Tc=25°C)
Junction Temperature Storage Temperature Range
Isolation Voltage
PC 300 W
Tj ... |
| Document |
 MG50G1BL2 Data Sheet
PDF 126.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MG50G1BL3 |
Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
|
| 2 | MG50G1JL1 |
Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
|
| 3 | MG50G2CL3 |
Toshiba |
Silicon NPN Triple Transistor |
|
| 4 | MG50G2DL1 |
Toshiba |
(MG50Gxxx) BJT POWER MODULE TRANSISTOR |
|
| 5 | MG50G2DM1 |
Toshiba |
MOSFET Power Module |
|