| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SC3074 tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i. |
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Toshiba |
2SC3011 r cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance ICBO IEBO |
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Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor |
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Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor r cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance ICBO IEBO |
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Toshiba Semiconductor |
Silicon NPN Transistor ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo |
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Toshiba Semiconductor |
Silicon NPN Transistor tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i. |
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Toshiba Semiconductor |
2SC3075 eliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handb |
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Toshiba |
2SC3098 9¾ dB ¾ 2.5 ¾ dB ¾3¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance I |
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Toshiba Semiconductor |
Silicon NPN Transistor operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
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Toshiba |
Silicon NPN Transistor . Low Collector Saturation Voltage : VC E(sat)=0.5V(Max.) at I C=1A . High Speed Switching Time : t s tg=l - O^ts (Typ . ) INDUSTRIAL APPLICATIONS Unit in mm 09.3 9 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emi |
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Toshiba Semiconductor |
Silicon NPN Transistor . Good Linearity of hpE . Complementary to 2SA1243 QS8MAX. Unit in mm -Hi'rJI a 95 MAX. n MAXIMUM RATINGS (Ta=25°C) Q6±Q15 0.6 MAX. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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Toshiba |
2SC3076 operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) |
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Toshiba |
ZENER DIODE |
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Toshiba |
2SC3072 ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo |
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Toshiba |
2SC3099 9.5 ¾ dB ¾ 1.7 ¾ dB ¾ 2.5 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICB |
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Toshiba |
Silicon NPN Transistor . Excellent Switching Times : t r=1.0/is(Max.), tf=1.5/*s(Max. ) at Ic=0.5A . High Collector Breakdown Voltage : Vceo= 400V 7.9 MAX. , Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Em |
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Toshiba Semiconductor |
Silicon NPN Transistor eliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handb |
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Toshiba Semiconductor |
TLCS-Z80 CTC : COUNTER TIMER CIRCUIT |
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