No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SB1640 (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 |
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Toshiba |
Silicon PNP Triple Diffused Type Transistor se design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) |
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Toshiba |
2SB1642 |
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Toshiba |
Silicon PNP Triple Diffused Type Transistor mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT ton IB1 Test Conditions VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −7 A IC = −7 A, IB = −7 mA VCE = −4 V, IC = −7 A VCE = −10 V, IC = |
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Toshiba Semiconductor |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. FEATURES • • • • Power supply volt |
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Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE OEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX 34 FORWARD VOLTAGE VF (V) MAX 1.2 MEASURE− MENT CURRENT IF (A) 0.2 REVERSE CURRENT IR (µA) MAX 10 MEASURE− MENT VOLTAGE VR (V) 3 6.8 7.5 8.3 30 10 4 5 1.2 0.2 10 4.5 7.4 8.2 9.1 30 10 4 6 |
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Toshiba Semiconductor |
Silicon PNP Transistor t Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 100 15 ― ― ― ― Typ. |
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Toshiba Semiconductor |
Silicon PNP Transistor |
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Toshiba Semiconductor |
CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS 61.2 67.5 73.8 90 99 135 162 180 190 200 198 210 220 216 230 240 ZENER MEASUREIMPEDANCE MENT rd (Ω) CURRENT IZ (mA) TYP. MAX MAX 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 43 47 51 68 75 82 100 110 150 180 200 200 210 220 220 230 240 2 |
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Toshiba |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY |
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Toshiba |
Point Regulator • Low stand-by current • Overtemperature/overcurrent protection • Operation voltage range is wide. • Maximum output current is high. • Difference between input voltage and output voltage is low. • Small package: SMV (SOT-25) (SC-74A) • Ceramic capaci |
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Toshiba Semiconductor |
TRANSISTOR |
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Toshiba Semiconductor |
Silicon PNP Transistor |
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Toshiba Semiconductor |
Silicon PNP Transistor se design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) |
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Toshiba |
Silicon PNP Epitaxial Transistor |
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Toshiba Semiconductor |
200mA CMOS Low-Dropout Regulator • Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode ) • Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA ) • High current output ( IOUT = 200 mA (max) |
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