| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba |
Silicon PNP Transistor • Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C |
|
|
|
|
Toshiba |
Silicon PNP Transistor . High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2SA1306A 2S |
|
|
|
|
Toshiba Semiconductor |
2SA1300 cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -20 V, IE = 0 IEBO VEB = -6 |
|
|
|
|
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
|
|
|
|
Toshiba |
Switched Mode Power Supply (SMPS) Controller IC Equipped with low frequency PWM mode and high frequency PWM mode for effectively reducing power consumption during standby conditions. The switch to standby mode is made when the FB voltage input to pin 4 (FB IN) exceeds the set voltage. The set volt |
|
|
|
|
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor gain Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector output capacitance Noise figure ICBO IEBO V (BR) CEO VCB = -80 V, IE = 0 VEB = -5 V, IC = 0 IC = -1 mA, IB = 0 hFE VCE = -6 V, |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR age, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i. |
|
|
|
|
Toshiba Semiconductor |
Frequency Counter IC • • • • • • • • • • Horizontal synchronization circuit (15.75 kHz, 31.5 kHz, 33.75 kHz, 45 kHz) Horizontal and vertical frequency counter Horizontal PLL Accepts 2-level and 3-level sync Accepts both negative and positive HD and VD Clamp pulse output |
|
|
|
|
Toshiba Semiconductor |
2SA1320 ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failu |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR |
|
|
|
|
Toshiba |
2SA1313 y even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precauti |
|
|
|
|
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor erature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute m |
|
|
|
|
Toshiba Semiconductor |
YCbCr/YPbPr Signal and Sync Processor Weight: 5.55 g (typ.) Luminance Block • • • • • • • • • • • • • • • • • • • • • • • Black stretch, DC restoration Dynamic DŽ correction SRT (LTI) Y group delay correction (shoot balance correction) APACON white peak limit White pulse limit (white let |
|
|
|
|
Toshiba Semiconductor |
2SA1357 erature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute m |
|
|
|
|
Toshiba |
TRANSISTOR |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -20 V, IE = 0 IEBO VEB = -6 |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability tes |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR |
|
|
|
|
Toshiba Semiconductor |
Silicon PNP Transistor n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ |
|