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2SA1306 |
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| Part Number | 2SA1306 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : ff=100MHz (Typ.) . Co... |
| Features |
. High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SA1306 2SA1306A 2SA1306B
VcBO
Collector-Emitter Voltage
2SA1306 2SA1306A 2SA1306B
v CEO
Emitter-Base Voltage Collector Current
VeBO ic
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
IB PC T
J
T stg
RATING -160 -180 -200 -160 -180 -200
-5 -1.5 -0.15
20
150
-55-150
UNIT
V
V
V A A W °C °C
Unit in iTim
10.3MAX.
7.0 #3.2±0.2
/*l
^"13 S
'A wd o H
1
1
1.4
LftSS 0.76-0.... |
| Document |
 2SA1306 Data Sheet
PDF 87.32KB |
| Distributor | Stock | Price | Buy |
|---|
