| No. | Partie # | Fabricant | Description | Fiche Technique |
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TRANSCOM |
2W High Linearity and High Efficiency GaAs Power FETs ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 1 |
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Transcom |
Low Noise and Medium Power GaAs FETs • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metal |
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Transcom |
Low Noise and Medium Power GaAs FETs Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www.DataSheet4U.com • High Associated Gain: Ga = 10 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • • • • Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 |
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Transcom |
Super Low Noise GaAs FETs • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pse |
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