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TC1601 |
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| Part Number | TC1601 |
| Manufacturer | TRANSCOM |
| Description | The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole pr... |
| Features |
! 2W Typical Power at 6 GHz
PHOTO ENLARGEMENT
! Linear Power Gain: GL = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Via Holes Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BVDGO ≥ 15 V
! Lg = 0.35 µm, Wg = 5 mm
! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation
! Lg = 0.35 µm, Wg = 5 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high
linearity and high P... |
| Document |
 TC1601 Data Sheet
PDF 104.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC1601A |
OPPOD |
LCD |
|
| 2 | TC1601A |
TINSHARP |
LCD |
|
| 3 | TC1601A-01 |
TINSHARP |
LCD |
|
| 4 | TC1601A-02WA0 |
Vatronix |
LCD |
|
| 5 | TC1601A-14 |
TINSHARP |
LCD |
|