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TGD |
300mA Low Dropout CMOS Voltage Regulator |
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TRinno |
Field Stop Trench IGBT • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE D |
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TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● |
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TGD |
Stereo Module ò Bluetooth 4.1+EDR compliant ò A2DP 1.3 and AVRCP 1.5 profile enable ò HFP profile version 1.6 compliant ò HSP profile version 1.2 compliant ò AVRCP profile version 1.5 compliant ò SBC decode ò Class 1 or 2 type output powe |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal res |
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Trinno |
IGBT • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE D |
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TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● |
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ST Microelectronics |
N-CHANNEL IGBT T c = 25 C Collector Current (continuous) at T c = 100 C Collector Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 ± 20 6 3 25 48 0.32 -65 to 175 175 Unit V V |
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TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
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TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
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STMicroelectronics |
N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT PE & REEL September 2003 1/10 www.DataSheet4U.com STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current |
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Topstek |
Current Transducers ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one package ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide input range ♦ Excellent frequency response (> 50 kHz) ♦ Low power consumption (22 |
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Topstek |
Current Transducers ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one package ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide input range ♦ Excellent frequency response (> 50 kHz) ♦ Low power consumption (22 |
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Topstek |
Current Transducers ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one package ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide input range ♦ Excellent frequency response (> 50 kHz) ♦ Low power consumption (22 |
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STMicroelectronics |
600V short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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STMicroelectronics |
600V short-circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and |
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ST Microelectronics |
N-CHANNEL IGBT OGIES Std. Version “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60F STGD3NB60FT4 STGP3NB60FD STGF3NB60FD STGB3NB60FDT4 MARKING GP3NB60F GD3NB60F GP3NB60FD GF3NB60FD GB3NB60FD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGING TUBE TAPE & REEL |
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ST Microelectronics |
N-CHANNEL IGBT OLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP7NB60K STGD7NB60KT4 STGP7NB60KFP STGP7NB60KD STGP7NB60KDFP STGB7NB60KDT4 June 2002 MARKING GP7NB60K GD7NB60K GP7NB60KFP GP7NB60KD GP |
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ST Microelectronics |
N-CHANNEL IGBT r Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperatu |
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STMicroelectronics |
N-channel IGBT Type STGD10NC60H ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Description Using the latest high voltage technology based on a patented str |
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