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Advanced Monolithic Systems |
PRECISION ADJUSTABLE SHUNT REGULATOR • Trimmed 0.25% Reference • Wide Operating Current Range 250µA to 150mA • Low Dynamic Output Impedance • Low Output Noise • Nominal Temperature Range -40°C to 125°C • Temperature-Compensated: 60ppm/°C typ • Internal Amplifier with 150mA Capability A |
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Advanced Monolithic Systems |
MICROPOWER SHUNT VOLTAGE REFERENCE • Tight Output Voltage Tolerance • Low Output Noise • Operating Current 60µA to 100mA • Low Dynamic Impedance • Low Temperature Coefficient • Available in the sub-miniature SOT-23 Package • 2.5V Device ( AMS4040) also available AMS4041 MICROPOWER SH |
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Advanced Monolithic Systems |
0.5V SHUNT REGULATOR • Trimmed 0.5% Tolerance • Wide Operating Current Range 0.1µA to 10mA • Low Reference Input Current 1.5nA • Low Dynamic Output Impedance • Low Output Noise • Nominal Temperature Range to 125°C • Temperature-Compensated: 50ppm/°C • Low supply current: |
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Advanced Monolithic Systems |
3A 20V Step-Down Converter + 1A LDO • Step-Down Converter + LDO in SO-8EP • Internally Compensated • Up to 95% Efficiency • Low ESR Ceramic Output Capacitor Stable • Soft Start • Under-Voltage Lockout • Dual Threshold Enable • 300 kHz Switching Frequency • Hiccup Current Limit • Over-T |
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National Semiconductor |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – – |
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National Semiconductor |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – – |
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TE |
pressure transducer PSI Pressure Ranges PCB Mountable Digital Output Barbed Pressure Ports APPLICATIONS Blocked Filter Detection Altitude and Airspeed Measurements Medical Instruments Fire Suppression System Panel Meter Air Movement/Environmental Con |
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TE |
pressure transducer Inches H2O Pressure Ranges PCB Mountable High Level Analog Output Barbed Pressure Ports APPLICATIONS Blocked Filter Detection Altitude and Airspeed Measurements Medical Instruments Fire Suppression System Panel Meter Air Movement |
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Texas Instruments Inc |
16384-Bin Dynamic Random-Access Memory |
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International Rectifier |
HEXFET Power MOSFET s Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -1 |
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Seiko |
Lithium Rechargeable Battery • Large discharge capacity : For high operational voltage range of 3.3V to 2.0V. • Long cycle life : Cycle life of over 100 cycles (over 50 cycles for MS414GE) under charge/discharge conditions of 3.1V to 2.0V (D.O.D.100%). • Excellent overdischarge |
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Advanced Monolithic Systems |
MICROPOWER SHUNT VOLTAGE REFERENCE • Tight Output Voltage Tolerance • Low Output Noise • Operating Current 250µ A to 100mA • Low Dynamic Impedance • Low Temperature Coefficient • Available in the sub-miniature SOT-23 Package • 1.2V Device ( AMS4041) also available AMS4040 MICROPOWER |
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National Semiconductor |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – – |
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National Semiconductor |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – – |
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TE |
pressure transducer PSI Pressure Ranges PCB Mountable High Level Analog Output Barbed Pressure Ports APPLICATIONS Blocked Filter Detection Altitude and Airspeed Measurements Medical Instruments Fire Suppression System Panel Meter Air Movement/Enviro |
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Seiko |
Lithium Rechargeable Battery • Large discharge capacity : For high operational voltage range of 3.3V to 2.0V. • Long cycle life : Cycle life of over 100 cycles (over 50 cycles for MS414GE) under charge/discharge conditions of 3.1V to 2.0V (D.O.D.100%). • Excellent overdischarge |
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Diotec Semiconductor |
Surface Mount Si-Bridge-Rectifiers VVRMS [V] 40 80 125 250 380 500 Rep. peak reverse voltage Periodische Spitzensperrspg. VRRM [V] 1) 80 160 250 600 800 1000 f > 15 Hz TA = 25°C TA = 25°C Grenzwerte Marking / Kennzeichnung2) Laser3) B ym C ym E ym J ym K ym M ym IFRM IFSM i2t Tj TS C |
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Advanced Monolithic Systems |
2A OUTPUT PWM BUCK CONVERTER • Stable with low ESR Output Ceramic Capacitors • Up to 99% On time • 2A Output Current • Wide Operating Input Voltage Range 5.5V to 32V • Fixed 330 kHz Frequency • Thermal Shutdown • Cycle-by-cycle Over Current Protection • Under Voltage Lockout • 5 |
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Hynix Semiconductor |
Registered DDR SDRAM DIMM • • • • • • • 1GB (128M x 72) Registered DDR DIMM based on stacked 128Mx4 DDR SDRAM JEDEC Standard 184-pin dual in-line memory module (DIMM) Error Check Correction (ECC) Capability Registered inputs with one-clock delay Phase-lock loop (PLL) clock dr |
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Hynix Semiconductor |
Low Profile Registered DDR SDRAM DIMM • • • • • • • 1GB (128M x 72) Low Profile Registered DDR DIMM based on stacked 128Mx4 DDR SDRAM JEDEC Standard 184-pin dual in-line memory module (DIMM) Error Check Correction (ECC) Capability Registered inputs with one-clock delay Phase-lock loop (P |
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