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IRLMS4502 |
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| Part Number | IRLMS4502 |
| Manufacturer | International Rectifier |
| Description | These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extr... |
| Features |
s Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -5.5 -4.4 -44 1.7 1.1 0.013 28 ± 12 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
75
Units
°C/W
www.irf.com
1
01/13/03
IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltag... |
| Document |
 IRLMS4502 Data Sheet
PDF 95.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLMS1503 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRLMS1503PBF |
International Rectifier |
Power MOSFET |
|
| 3 | IRLMS1503PBF-1 |
International Rectifier |
Power MOSFET |
|
| 4 | IRLMS1902 |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRLMS2002 |
International Rectifier |
HEXFET Power MOSFET |
|