Skyworks CDF fiche technique

No.	Partie #	Fabricant	Description
1	CDF7623-000	Skyworks	Silicon Schottky Barrier Diode Bondable Chips and Beam Leads  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for appl
2	CDF7623-207	Skyworks	Silicon Schottky Barrier Diodes  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They a
3	CDF7621-203	Skyworks	Silicon Schottky Barrier Diodes  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They a
4	CDF7621-207	Skyworks	Silicon Schottky Barrier Diodes  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They a
5	CDF7623-203	Skyworks	Silicon Schottky Barrier Diodes  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They a
6	CDF7621-000	Skyworks	Silicon Schottky Barrier Diode Bondable Chips and Beam Leads  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for appl