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CDF7623-207 |
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| Part Number | CDF7623-207 |
| Manufacturer | Skyworks |
| Description | Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate... |
| Features |
Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also av... |
| Document |
 CDF7623-207 Data Sheet
PDF 578.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CDF7623-203 |
Skyworks |
Silicon Schottky Barrier Diodes |
|
| 2 | CDF7623-000 |
Skyworks |
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads |
|
| 3 | CDF7621-000 |
Skyworks |
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads |
|
| 4 | CDF7621-203 |
Skyworks |
Silicon Schottky Barrier Diodes |
|
| 5 | CDF7621-207 |
Skyworks |
Silicon Schottky Barrier Diodes |
|