No. | Partie # | Fabricant | Description | Fiche Technique |
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Sirenza Microdevices |
Power Amplifier • High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 VCC VBIAS RFIN N/C www.DataSheet4U.com RFOUT/ VCC Input Match Reduction Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF Icc Parameters: Test Conditions: Z0 = 5 |
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Sirenza Microdevices |
Power Amplifier • Now available in Lead Free, RoHS Compliant, & Green Packaging • High Linearity Performance: +21 dBm IS-95 Channel Power at -55 dBc ACP +48 dBm OIP3 Typ. • On-chip Active Bias Control • Patented High Reliability GaAs HBT Technology • Surface-Mountab |
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Sirenza Microdevices |
Power Amplifier • Now available in Lead Free, RoHS Compliant, & Green Packaging • High Linearity Performance: +21 dBm IS-95 Channel Power at -55 dBc ACP +48 dBm OIP3 Typ. • On-chip Active Bias Control • Patented High Reliability GaAs HBT Technology • Surface-Mountab |
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Sirenza Microdevices |
Power Amp The matte tin finish on Sirenza’s lead-free package utilizes a post • Now available in Lead Free, RoHS annealing process to mitigate tin whisker formation and is RoHS Compliant, & Green Packaging compliant per EU Directive 2002/95. This package is a |
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Sirenza Microdevices |
Power Amp The matte tin finish on Sirenza’s lead-free package utilizes a post • Now available in Lead Free, RoHS annealing process to mitigate tin whisker formation and is RoHS Compliant, & Green Packaging compliant per EU Directive 2002/95. This package is a |
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