| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sirectifier Semiconductors |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs =15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSh |
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Sirectifier Semiconductors |
Discrete IGBTs oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; IC=IC90; VGE=15 TJ=25 C TJ=125 C o o Characteristic Values min. 600 2.5 5.0 200 1 ±100 2.5 typ. max. Uni |
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Sirectifier Semiconductors |
Discrete IGBTs 5oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC TJ TJM Tstg www.DataSheet4U.com Md Mounting C torque Terminal connection torque(M4) 1.5/13 1.5/13 30 300 Nm/Ib.in. g o Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) |
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Sirectifier Semiconductors |
Discrete IGBTs 5oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC TJ TJM Tstg www.DataSheet4U.com Md Mounting C torque Terminal connection torque(M4) 1.5/13 1.5/13 30 300 Nm/Ib.in. g o Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) |
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Sirectifier Semiconductors |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs =15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSh |
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Sirectifier Semiconductors |
Discrete IGBTs oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; IC=IC90; VGE=15 TJ=25 C TJ=125 C o o Characteristic Values min. 600 2.5 5.0 200 1 ±100 2.5 typ. max. Uni |
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