SG50N06D3S |
Part Number | SG50N06D3S |
Manufacturer | Sirectifier Semiconductors |
Description | SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.... |
Features |
=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.com TJ TJM Tstg Md Mounting torque Terminal connection torque(M4) Weight
CASE DIODE IGBT
A Nm/Ib.in. g
(TJ=25 C, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=25 C TJ=125 C
o o
Characteristic Values min. typ. max. 600 2.5 5.0 200 1 ±100 2.5
Un... |
Document |
SG50N06D3S Data Sheet
PDF 185.61KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SG50N06D2S |
Sirectifier Semiconductors |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs | |
2 | SG50N06DS |
Sirectifier Semiconductors |
Discrete IGBTs | |
3 | SG50N06DT |
Sirectifier Semiconductors |
Discrete IGBTs | |
4 | SG50N06S |
Sirectifier Semiconductors |
Discrete IGBTs | |
5 | SG50N06T |
Sirectifier Semiconductors |
Discrete IGBTs |