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Silicon Laboratories |
GUI USER GUIDE ete, installation instructions for the USB driver for the Voice motherboard are displayed. At this point, connect the USB cable from the PC to the Voice motherboard. If prompted to install a driver, direct Windows to use the directory specified in th |
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Microsemi Corporation |
NPN SILICON LOW POWER TRANSISTOR V(BR)CEO Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A ICES Min. 15 18 10 30 45 TO- 18* (TO-206AA) *See appendix A for package outline Max. Unit Vdc Vdc 10 ηAdc 10 6 Lake Street, Lawrence, MA 01841 1-800-446- |
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Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector |
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Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5 |
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Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5 |
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Panasonic Semiconductor |
Silicon Monolithic Bi - CMOS IC …………………………………………………………………………………………………………….. 3 Applications ………………………………………………………………………………………………………… 3 Package ……………………………………………………………………………………………………………. 3 Application Circuit …………………………………………………………………………………………………. 4 Pin Descriptions ………………... |
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Microsemi |
UNITIZED DUAL NPN SILICON TRANSISTOR |
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Vishay Siliconix |
High-Performance Multiplexing with the DG408 |
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Rohm |
Epitaxial Planar Silicon Diode Arrays |
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Diotec Semiconductor |
Silicon-Twin Diodes Center tap für eine 50 Hz Sinus-Halbwelle IFAV IFAV IFAV IFAV IFSM 1.0 A 1) 2.0 A 1) 1.0 A 1) 2.0 A 1) 10 A TU = 25/C TA = 25/C 1 ) Leads kept at ambient temperature at a distance of 3 mm from case Anschlußdrähte in 3 mm Abstand von Gehäuse auf Umgebungs |
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Rohm |
Epitaxial Planar Silicon Diode Arrays |
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Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5 |
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Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5 |
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Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5 |
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Microsemi Corporation |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR ase Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5 |
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Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR dc VCE = 55 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 |
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Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR dc VCE = 55 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 |
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Microsemi Corporation |
(JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 V(BR)CEO 60 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Vdc ICEO |
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Microsemi Corporation |
(JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 V(BR)CEO 60 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Vdc ICEO |
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Silicon |
Expanding ADC1 Dyanmic Range igure 1) is from 0.6 V to the voltage reference which is typically 1.2 V. This simply means that the input voltages to ADC1 from both VSENSE and the REFDAC should stay within the range of 0.6 to 1.2 V referenced to the common ground to achieve good l |
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