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Silan Microelectronics Joint-stock |
LOW IR SCHOTTKY BARRIER DIODE CHIPS rs Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 5 150 150 -40~150 Unit V A A °C ° |
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Silan Microelectronics |
LOW IR SCHOTTKY BARRIER DIODE Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 3 80 150 -40~150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=3A VR=100V Min. 100 --Max. -0.8 |
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Silan Microelectronics |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS arameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.1mA IF=200mA VR=10V Min. 30 --Max. -0.50 30 Unit V V µA www.DataSheet4U.com HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 20 |
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Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS Reverse Voltage Forward Voltage Symbol VBR VF Test Conditions IR=8µA IF=1.0mA IF=10mA IF=15mA Reverse Current IR VR=50V VR=70V --Min. 70 Max. -0.40 0.71 0.95 0.08 8 V Unit V µA www.DataSheet4U.com HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www. |
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Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS eters Reverse Voltage Forward Voltage Symbol VBR VF1 VF2 VF3 Reverse Current www.DataSheet4U.com IR IR Test Conditions IR=100µA IF=0.1mA IF=10mA IF=250mA VR=50V VR=75V Min. 100 -----Max. -0.25 0.45 1 2 5 Unit V V V V µA µA HANGZHOU SILAN MICROELECTR |
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Silan Microelectronics |
SCHOTTKY BARRIER DIODE R VF IR Test Conditions IR=0.5mA IF=3A VR=60V Min. 60 --Max. -0.75 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ La fabricated in silicon |
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Silan Microelectronics Joint-stock |
SCHOTTKY BARRIER DIODE CHIPS erse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=5A VR=60V Min. 60 --Max. -0.70 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar tech |
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Silan Microelectronics |
SCHOTTKY BARRIER DIODE R VF IR Test Conditions IR=0.5mA IF=3A VR=40V Min. 40 --Max. -0.55 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ La fabricated in silicon |
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