Siemens Semiconductor TP- fiche technique

No.	Partie #	Fabricant	Description
1	Q62702-C2596	Siemens Semiconductor Group	PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 32 32 5 - I C = 100 µA, IB = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdow
2	Q62702-C1613	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B
3	Q62702-C1614	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B
4	Q62702-C1635	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B
5	Q62702-C2119	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 54 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 55 60 60 60 5 1 1.5 100 200 1.5 150 Unit BCP 56 80 100 100 A mA W ˚C V – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb 40
6	Q62702-C2123	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 54 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 55 60 60 60 5 1 1.5 100 200 1.5 150 Unit BCP 56 80 100 100 A mA W ˚C V – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb 40
7	Q62702-C2595	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1-1998 BCP 54M ... BCP 56M Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. Unit V(BR)CEO BCP 54M BCP 55M BCP 56M 45 60 80 100 20 25
8	Q62702-C2597	Siemens Semiconductor Group	NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) specified. Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 32 32 5 - I C = 10 mA, I B = 0 Collector-base breakdown volta
9	Q60206-X55	Siemens Semiconductor Group	NPN SILICON TRANSISTOR FOR VHF OUTPUT STAGES IN BROADBAND AMPLIFIERS
10	Q62702-C1861	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B
11	Q62702-C1903	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B
12	Q62702-C2109	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb
13	Q62702-C2110	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb
14	Q62702-C2112	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb
15	Q62702-C2113	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb
16	Q62702-C2115	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb
17	Q62702-C2116	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb
18	Q62702-C2117	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 54 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 55 60 60 60 5 1 1.5 100 200 1.5 150 Unit BCP 56 80 100 100 A mA W ˚C V – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb 40
19	Q62702-C2120	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 54 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 55 60 60 60 5 1 1.5 100 200 1.5 150 Unit BCP 56 80 100 100 A mA W ˚C V – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb 40
20	Q62702-C2146	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF driver and output stages High collector current) oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb