Q62702-C2595 |
Part Number | Q62702-C2595 |
Manufacturer | Siemens Semiconductor Group |
Description | BCP 54M ... BCP 56M NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 51M...BCP 53M(PNP) 4 5 ... |
Features |
1-1998
BCP 54M ... BCP 56M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max.
Unit
V(BR)CEO
BCP 54M BCP 55M BCP 56M 45 60 80 100 20 250 0.5 1
V
I C = 10 mA, I B = 0
Collector-base breakdown voltage
V(BR)CBO
BCP 54M BCP 55M BCP 56M 45 60 100
I C = 100 µA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO I CBO I CBO hFE hFE hFE VCEsat VBE(ON)
5 25 40 25 -
I E = 10 µA, I C = 0
Collector cutoff current nA µA V
VCB = 30 V, I E = 0
Collector cutoff current
VCB = 30 V, I E = 0 ... |
Document |
Q62702-C2595 Data Sheet
PDF 31.75KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | Q62702-C2592 |
Siemens Semiconductor Group |
PNP Silicon AF Transistor (For AF driver and output stages High collector current) | |
2 | Q62702-C2593 |
Siemens Semiconductor Group |
PNP Silicon AF Transistor (For AF driver and output stages High collector current) | |
3 | Q62702-C2594 |
Siemens Semiconductor Group |
PNP Silicon AF Transistor (For AF driver and output stages High collector current) | |
4 | Q62702-C2596 |
Siemens Semiconductor Group |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) | |
5 | Q62702-C2597 |
Siemens Semiconductor Group |
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |