| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
SILICON MINIATURE THYRISTOR |
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Siemens Semiconductor Group |
NPN SILICON RF BROADBAND TRANSISTOR |
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Siemens Semiconductor Group |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
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Siemens Semiconductor Group |
PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
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Siemens Semiconductor Group |
TOPLED RG Super-Bright/ Hyper-Red GaAIAs-LED q q q q q q q q color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering me |
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Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – Forward voltage1) |
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Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – Forward voltage1) |
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Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – Forward voltage1) |
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Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998- |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) .3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistanc |
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Siemens Semiconductor Group |
NPN SILICON RF BROADBAND TRANSISTOR |
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Siemens Semiconductor Group |
NPN SILICON RF BROADBAND TRANSISTOR |
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Siemens Semiconductor Group |
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) aracteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 15 |
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Siemens Semiconductor Group |
PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage) racteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V |
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Siemens Semiconductor Group |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA C |
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Siemens Semiconductor Group |
PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) X 42 BSS 63 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 42 BSS 63 Collector-base breakdown voltage1) IC = 100 µA BCX 42 BSS 63 Emit |
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