| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
NPN SILICON RF TRANSISTORS |
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Siemens Semiconductor Group |
NPN SILICON RF BROADBAND TRANSISTOR |
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Siemens Semiconductor Group |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.) ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Elec |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode acteristics Drain-source breakdown voltage typ. 100 10 1 max. 12 13 50 1.5 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode meter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 9 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode stics Drain-source breakdown voltage typ. 14 0.9 max. 12 16 60 50 500 19 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 10 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
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Siemens Semiconductor Group |
NPN Silicon RF Transistor causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because |
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Siemens Semiconductor Group |
NPN Silicon RF Transistor stics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I |
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Siemens Semiconductor Group |
PNP Silicon RF Transistor lues typ. max. Unit V(BR)CEO 15 50 - V nA 100 µA 10 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode characteristics Drain-source breakdown voltage typ. 12 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S |
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Siemens Semiconductor Group |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
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Siemens Semiconductor Group |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
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Siemens Semiconductor Group |
NPN Silicon RF Transistors , IB = 0 Emitter-base breakdown voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain, IC = 1 mA, VCE = 10 V BF 840 BF 841 Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 |
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Siemens Semiconductor Group |
PNP Silicon RF Transistor Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 100 µA 1 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = |
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Siemens Semiconductor Group |
NPN Silicon RF Transistor acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 1 |
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Siemens Semiconductor Group |
NPN SILICON RF BROADBAND TRANSISTOR |
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Siemens Semiconductor Group |
NPN SILICON RF BROADBAND TRANSISTOR |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode eter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = |
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