| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
800 V TRIAC DRIVER OPTOCOUPLER • High Input Sensitivity, IFT=2 mA • Blocking Voltage, 800 V • Isolation Test Voltage 5300 VACRMS • 300 mA On-state Current • High Static dv/dt 10,000 V/Ms • Inverse Parallel SCRs Provide • Commutating dv/dt >2K V/µ s • Very Low Leakage <10 µ A • Sma |
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Siemens Semiconductor Group |
Signal Processing Subscriber Line Interface Codec Filter SLICOF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . . |
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Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = |
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Siemens Semiconductor Group |
PNP TRANSISTORS FOR AF INPUT STAGES |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2 |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra |
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Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 0.8 1.1 2.9 0.052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VC |
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Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drive circuit) akdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 1.61 60 mV 0.3 V 0.6 1.5 2.2 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) Vi(on) 1 VEB = 10 V, IC = 0 DC current gain IC = |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) cified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resista |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) 9 20 16.1 2.4 2.3 7.5 9.8 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 ∆CT/C T 6 8.2 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MH |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) T 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) tio VR = 2 V, 8 V, f = 1 MHz Capacitance matching VR = 2 V, 8 V Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz 1) Values typ. max. Unit IR – – CT 43 19.1 CT2 CT8 ∆CT C T rS Q 2.05 – – – 44.75 20.8 2.15 – 0.18 200 46.5 22.7 |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) T Values typ. – – 470 – – 1.4 480 500 – max. Unit nA 20 200 pF 520 34 – – – – 3 – Ω – ppm/K % 15 – – – – CT Semiconductor Group 2 BB 512 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) T |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) 2.9 pF CT1/CT28 13.5 ∆CT/CT – 2.5 – – % Ω – – – nH – rS LS Semiconductor Group 2 BB 639 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) 00 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 ∆CT/CT – 2.5 – – % Ω – – – nH – rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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Siemens Semiconductor Group |
PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) eakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 227 70 V 0.3 1.2 2.5 29 0.52 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.5 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = |
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Siemens Semiconductor Group |
PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) kdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.75 70 V 0.3 1.5 2.5 13 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.6 VEB = 10 V, IC = 0 DC current gain IC = 50 mA, VCE = |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) erwise specified. Parameter Symbol min. Breakdown voltage IR = 10 µA V(BR) Forward voltage VF BAT 14-014/-034 IF = 1 mA BAT 14-044/-064 BAT 14-074/-094 BAT 14-104/-114 BAT 14-124 BAT 14-014/-034 IF = 10 mA BAT 14-044/-064 BAT 14-074/-094 BAT 14-104/- |
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Siemens Semiconductor Group |
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER • High Current Transfer Ratio, IF=10 mA, VCE=5 V IL205A, 40 –80% IL206A, 63 –125% IL207A, 100 –200% IL208A, 160 –320% • High BVCEO, 70 V • Isolation Test Voltage, 2500 VACRMS • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, . |
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