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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj = |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor istics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.4 0.1 2 1 12 15 2 1 60 30 10 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold vo |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
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Siemens Semiconductor Group |
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) q q q q BTS 100 P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 50 V ID –8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C6707 |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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Siemens |
(S10Kxxx) METAL-OXIDE VARISTOR |
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