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BTS100 |
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| Part Number | BTS100 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Smart Highside Power Switch TEMPFET® Features q q q q BTS 100 P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G ... |
| Features |
q q q q
BTS 100
P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
Pin
1 G
2 D
3 S
Type BTS 100
VDS
– 50 V ID –8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 30 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values – 50 – 50 ± 20 – 8.0 – 1.5 – 32 – 25 500 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C ... |
| Document |
 BTS100 Data Sheet
PDF 301.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BTS100 |
Infineon Technologies AG |
Smart Highside Power Switch |
|
| 2 | BTS110 |
Siemens Semiconductor Group |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 3 | BTS110 |
Infineon Technologies AG |
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 4 | BTS110 |
Infineon Technologies AG |
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 5 | BTS112A |
Siemens Semiconductor Group |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
|