| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
16 Kbit 2048 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus/ Page Protection Mode • Data EEPROM internally organized as 2048 bytes and 128 pages × 16 bytes • Page protection mode, flexible page-by-page hardware write protection – Additional protection EEPROM of 128 bits, 1 bit per data page P-DIP-8-4 – Protection setting for each |
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Siemens Group |
PNP Silicon Transistor |
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Siemens |
8/16 Kbit (1024/2048 x 8 bit) Serial CMOS-EEPROM • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages × 16 bytes • Low power CMOS • VCC = 2.7 to 5.5 V operation • Two wire serial interface bus, I2C-Bus compatible • Filtered inputs for noise suppression with Schmitt trigger • Clock |
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Siemens Semiconductor Group |
PNP SILICON TRANSISTOR |
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Siemens Group |
PNP Silicon Transistor |
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Siemens |
16 Kbit (2048 x 8 bit) Serial CMOS-EEPROM • Data EEPROM internally organized as 2048 bytes and 128 pages × 16 bytes • Low power CMOS • VCC = 2.7 to 5.5 V operation • Two wire serial interface bus, I2C-Bus compatible • Three chip select pins to address 8 devices • Filtered inputs for noise su |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High current gain) t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics |
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Siemens Semiconductor Group |
16-Bit CMOS Single-Chip Microcontrollers single-chip CMOS microcontrollers. It combines high CPU performance (up to 10 million instructions per second) with high peripheral functionality and enhanced IO-capabilities. It also provides on-chip ROM, on-chip high-speed RAM and clock generation |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High current gain) t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16 Marking BA BC B |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) h JA Rth JS ≤ ≤ Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. S |
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Siemens Semiconductor Group |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA C |
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Siemens Semiconductor Group |
PNP SILICON TRANSISTOR |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High current gain) t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 67 BCW 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 807 BC 808 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. D |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors l power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 817 BC 818 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. |
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