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Q62702-C1632 |
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| Part Number | Q62702-C1632 |
| Manufacturer | Siemens Semiconductor Group |
| Description | NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 6... |
| Features |
t V
mA A mA mW ˚C
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 65 BCW 66
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCW 65 BCW 66 BCW 65 BCW 66 IEB0 hFE 35 50 80 75 110 180 100 160 250 35 60 100 – – – – – – 1... |
| Document |
 Q62702-C1632 Data Sheet
PDF 134.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C1635 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 2 | Q62702-C1612 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High current gain) |
|
| 3 | Q62702-C1613 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 4 | Q62702-C1614 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 5 | Q62702-C1654 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|