Siemens BF9 fiche technique

No.	Partie #	Fabricant	Description
1	BF963	Siemens	Silicon N-Channel MOSFET Tetrode
2	BF993	Siemens	N-Channel MOSFET Transistor
3	BF965	Siemens	Silicon N-Channel MOSFET Tetrode
4	BF994S	Siemens Semiconductor Group	Silicon N Channel MOSFET Tetrode rce leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off volt
5	BF998	Siemens Semiconductor Group	Silicon N-Channel MOSFET Tetrode q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum R
6	BF926	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTOR
7	BF997	Siemens Semiconductor Group	Silicon N Channel MOSFET Tetrode = 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinc
8	BF998R	Siemens Semiconductor Group	Silicon N-Channel MOSFET Tetrode
9	BF998W	Siemens Semiconductor Group	Silicon N-Channel MOSFET Tetrode
10	BF939	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTOR
11	BF959	Siemens Semiconductor Group	NPN Silicon RF Transistor e breakdown voltage IE = 10 µA Collector cutoff current V = 20 V DC current gain, VCE = 10 V IC = 5 mA IC = 20 mA Base-emitter voltage IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage IC = 30 mA, IB = 2 mA Base-emitter saturation voltage I
12	BF967	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTOR
13	BF968	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTOR
14	BF979S	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTOR
15	BF987	Siemens Semiconductor Group	SILICON N CHANNEL MOSFET TRIODE s Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Power gain (test
16	BF995	Siemens Semiconductor Group	Silicon N Channel MOSFET Tetrode , VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 2
17	BF996S	Siemens Semiconductor Group	Silicon N Channel MOSFET Tetrode urce leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off vol
18	BF999	Siemens Semiconductor Group	Silicon N-Channel MOSFET Triode 2 50 18 2.5 V V(BR) GSS IGSS Gate-source leakage current VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA nA mA V IDSS – VGS (p) AC Characteristics Forward transconductance VDS = 10 V, ID