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BF999 |
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| Part Number | BF999 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type BF 999 Marking LB Ordering Code (tape and reel) Q62702-F1132 Pin Configuratio... |
| Features |
2 50 18 2.5
V
V(BR) GSS IGSS
Gate-source leakage current VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA
nA mA V
IDSS – VGS (p) AC Characteristics Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Power gain (test circuit) VDS = 10 V, ID = 10 mA, f = 200 MHz, GG = 2 mS, GL = 0.5 mS Noise figure (test circuit) VDS = 10 V, ID = 10 mA, f = 200 MHz, GG = 2... |
| Document |
 BF999 Data Sheet
PDF 116.22KB |
| Distributor | Stock | Price | Buy |
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