| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Semicoa |
Chip Type 2C2907A Geometry 0600 Polarity PNP SQ2907AF, 2N3486, 2N3486A, 2N6987, 2N6989 Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal |
|
|
|
|
Semicoa |
Chip Type 2C2369A Geometry 0005 Polarity NPN • High speed switching capabilities Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 17.5 kÅ min. Au - 6.5 kÅ nom. 3.6 mils x 2.8 mils 3.6 mils x 2.8 mils 8 mils nominal 16 |
|
|
|
|
Semicoa |
Chip Type 2C2484 Geometry 0307 Polarity NPN • High speed switching capabilities Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 19.5 kÅ min. Au - 6.5 kÅ nom. 3.6 mils diameter 2.5 mils diameter 8 mils nominal 18 mils |
|
|
|
|
Semicoa |
Chip Type 2C2605 Geometry 0220 Polarity NPN • High speed switching capabilities Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 19.5 kÅ min. Au - 6.5 kÅ nom. 3.6 mils diameter 2.5 mils diameter 8 mils nominal 18 mils |
|
|
|
|
Semicoa |
Chip Type 2C2904A Geometry 0600 Polarity PNP Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Silox Passivated Elect |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2907A Geometry 0600 Polarity PNP SQ2907AF, 2N3486, 2N3486A, 2N6987, 2N6989 Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal |
|
|
|
|
Semicoa |
Chip Type 2C2222A Geometry 0400 Polarity NPN Medium power ratings Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 24 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Si |
|
|
|
|
Semicoa |
Chip Type 2C2857 Geometry 0011 Polarity NPN ft = 1.2 GHz (typ) at 5 mA/6V Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.3 mils x 2.3 mils 2.3 mils x 2.3 mils 8 mils nominal 16 mils x 1 |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2222A Geometry 0400 Polarity NPN Medium power ratings Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 24 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Si |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2222A Geometry 0400 Polarity NPN Medium power ratings Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 24 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Si |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2857 Geometry 0011 Polarity NPN ft = 1.2 GHz (typ) at 5 mA/6V Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.3 mils x 2.3 mils 2.3 mils x 2.3 mils 8 mils nominal 16 mils x 1 |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2857 Geometry 0011 Polarity NPN ft = 1.2 GHz (typ) at 5 mA/6V Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.3 mils x 2.3 mils 2.3 mils x 2.3 mils 8 mils nominal 16 mils x 1 |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2904A Geometry 0600 Polarity PNP Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Silox Passivated Elect |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2904A Geometry 0600 Polarity PNP Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Silox Passivated Elect |
|
|
|
|
Semicoa Semiconductor |
Chip Type 2C2907A Geometry 0600 Polarity PNP SQ2907AF, 2N3486, 2N3486A, 2N6987, 2N6989 Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal |
|