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Features
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Mechanical Specifications
Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Silox Passivated
Electrical Characteristics
TA = 25oC
Parameter
BVCEO BVCBO BVEBO ICBO
Test conditions
IC = 10.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 50 V, IE = 0
Min
60 60 5.0 ---
Max
------10
Unit
V dc V dc V dc nA
hFE IC = 150 mA dc, VCE = 10 V 40 120 --Due to limitations of probe testing, only dc parameters are tested. This must be done with p...
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2C2904A Data Sheet
