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SemiHow |
N-Channel MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A Ω nC Application Switch Mode P |
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SemiHow |
700V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
700V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application Lighting Hard Switching PWM Server Power Supply Charger Key Parameters Parameter |
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SemiHow |
700V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 6 0.7 14 Unit V A ȍ nC Application Switch Mode Po |
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SemiHow |
700V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 0.95 10 Unit V A ȍ nC Application Switch Mode |
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SemiHow |
700V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS |
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SemiHow |
650V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
650V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
650V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
700V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(O |
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SemiHow |
700V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(O |
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