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HCD65R660S |
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| Part Number | HCD65R660S |
| Manufacturer | SemiHow |
| Description | HCD65R660S_HCU65R660S June 2015 HCD65R660S / HCU65R660S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology ... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ = 0.6 ȍ
ID = 6.2 A
D-PAK I-PAK
2
1 1
32 3
HCD65R660S HCU65R660S 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Cur... |
| Document |
 HCD65R660S Data Sheet
PDF 283.50KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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