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Seme Lab TO- DataSheet

No. Partie # Fabricant Description Fiche Technique
1
IP138

Seme LAB
5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR

• OUTPUT VOLTAGE RANGE OF 1.25 TO 35V
• 1% OUTPUT VOLTAGE TOLERANCE (
  –A VERSIONS)
• 0.3% LOAD REGULATION
• 0.01% / V LINE REGULATION
• COMPLETE SERIES OF PROTECTIONS:
• CURRENT LIMITING
• THERMAL SHUTDOWN
• SOA CONTROL Pin 1
  – ADJ. Pin 2
  – VOUT Pin
Datasheet
2
2N3904-T18

Seme LAB
GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR

• SILICON NPN EPITAXIAL TRANSISTOR
• HERMETIC TO18 PACKAGE
• HI-REL SCREENING OPTIONS AVAILABLE
• HIGH SPEED SATURATED SWITCHING APPLICATIONS A hermetically sealed TO18 version of the popular 2N3904 plastic part intended for high reliability applicat
Datasheet
3
LM117H

Seme LAB
0.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR
4 5 ° 1 2 .7 0 (0 .5 0 0 ) m in .
• Ouput Voltage Range Adjustable: 1.25 to 40V For Standard Version 1.25 to 60V For
  –HV Version
• 1% Output Voltage Tolerance (
  –A Versions) H Package TO39 Pin 1 = Vin Pin 2 = ADJ. Pin 3 =Vout
• 0.3% Load Regulatio
Datasheet
4
2N3904CSM

Seme LAB
GENERAL PURPOSE NPN TRANSISTOR
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012)
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.07
Datasheet
5
LM137HVH

Seme LAB
0.5 AMP NEGATIVE ADJUSTABLE VOLTAGE REGULATOR


  –1.2V TO 47V OUTPUT VOLTAGE RANGE Pin 1
  – ADJ. Pin 2
  – VOUT Pin 3
  – VIN
• 0.5A OUTPUT CURRENT
• 1% OUTPUT VOLTAGE TOLERANCE
• 0.5% / A LOAD REGULATION
• 0.01% / V LINE REGULATION
• 0.02% / W THERMAL REGULATION
• INTERNAL PROTECTION H Package
  – TO
Datasheet
6
LM338

Seme LAB
5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR

• OUTPUT VOLTAGE RANGE OF 1.25 TO 35V
• 1% OUTPUT VOLTAGE TOLERANCE (
  –A VERSIONS)
• 0.3% LOAD REGULATION
• 0.01% / V LINE REGULATION
• COMPLETE SERIES OF PROTECTIONS: Q Package
  – TO
  –254 K Package
  – TO
  –3 1 2 3
• CURRENT LIMITING
• THERMAL SHUTDO
Datasheet
7
2N3792

Seme LAB
PNP SILICON EPITAXIAL BASE POWER TANSISTORS
c reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibi
Datasheet
8
BUP56

Seme LAB
NPN Transistor

• DIFFUSED BY SEMEFAB
• VERY LOW SATURATION VOLTAGES
• VERY FAST SWITCHING (t = 60ns)
• HIGH RELIABILITY 3.55 (0.140) 3.81 (0.150) 20.80 (0.819) 21.46 (0.845) 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) APPLICAT
Datasheet
9
BFT33A

Seme LAB
NPN SILICON TRANSISTOR
5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
• FAST SWITCHING
• HIGH PULSE POWER 2 .5 4 (0 .1 0 0 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .
Datasheet
10
BFX48

Seme LAB
PNP SILICON EPITAXIAL TRANSISTOR
25°C unless otherwise stated) Parameter ICES V(BR)CBO V(BR)CEO* Collector Cut
  –off Current Collector
  – Base Breakdown Voltage Collector
  – Emitter Breakdown Voltage Test Conditions VBE = 0 VCE = -20V IE = 0 IC =
  –10mA IE =
  –10mA IC =
  –1mA IC =
  –10mA I
Datasheet
11
BDS10SMD

Seme LAB
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

• HERMETIC METAL OR CERAMIC PACKAGES 1.0 1 23 1 3 .7 0
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1
Datasheet
12
BDX63A

Seme LAB
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
b.co.uk Website: http://www.semelab.co.uk V V V A A mA W °C °C 100 5 ï ï 120 5 8 12 í ï ï 140 5 ï ï î 150 90 200 -65 to 200 1.94 °C / W Prelim. 7/93 BDX63 BDX63A BDX63B BDX63C ELECTRICAL CHARACTERISTICS (Tj = 25°C, Parameter ICBO ICEO IEBO hF
Datasheet
13
BC107

Seme LAB
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR

• SILICON NPN
• HERMETICALLY SEALED TO18
• SCREENING OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 2 1 TO
  –18 METAL PACKAGE Underside View PIN 1
  – Emitter PIN 2
  – Base PIN 3
  – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VC
Datasheet
14
BC108

Seme LAB
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR

• SILICON NPN
• HERMETICALLY SEALED TO18
• SCREENING OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 2 1 TO
  –18 METAL PACKAGE Underside View PIN 1
  – Emitter PIN 2
  – Base PIN 3
  – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VC
Datasheet
15
IP338

Seme LAB
5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR

• OUTPUT VOLTAGE RANGE OF 1.25 TO 35V
• 1% OUTPUT VOLTAGE TOLERANCE (
  –A VERSIONS)
• 0.3% LOAD REGULATION
• 0.01% / V LINE REGULATION
• COMPLETE SERIES OF PROTECTIONS:
• CURRENT LIMITING
• THERMAL SHUTDOWN
• SOA CONTROL Pin 1
  – ADJ. Pin 2
  – VOUT Pin
Datasheet
16
LM120

Seme LAB
1.5 AMP NEGATIVE VOLTAGE REGULATOR

• OUTPUT VOLTAGES OF -5, -12, -15V
• 0.01% / V LINE REGULATION
• 0.3% / A LOAD REGULATION
• THERMAL OVERLOAD PROTECTION K Package
  – TO
  –3 R Package
  – TO
  –66  !
• SHORT CIRCUIT PROTECTION 1 2 3
• OUTPUT TRANSISTOR SOA PROTECTION
• 1% VOLTAGE TOLE
Datasheet
17
LM150

Seme LAB
3 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR
 ! 1 2
• OUTPUT VOLTAGE RANGE OF 1.25 TO 35V 3
• 1% OUTPUT VOLTAGE TOLERANCE (
  –A VERSIONS)
• 0.3% LOAD REGULATION
• 0.01% / V LINE REGULATION
• COMPLETE SERIES OF PROTECTIONS:
• CURRENT LIMITING
• THERMAL SHUTDOWN
• SOA CONTROL Pin 1
  – ADJ. Pin
Datasheet
18
2N6796

Seme LAB
TMOS FET TRANSISTOR
5 .0 8 (0 .2 0 0 ) ty p .
• VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3
• ID = 8A
• RDSON = 0.18Ω 4 5 ° TO
  –39 METAL PACKAGE Underside View PIN 1
  – Source PIN 2
  – Gate PIN 3
  –
Datasheet
19
2N3019

Seme LAB
NPN SILICON TRANSISTOR

• NPN High Voltage Planar Transistor
• Hermetic TO39 Package 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• Full Screening Options Available 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (
Datasheet
20
2N3637CSM

Seme LAB
PNP SILICON TRANSISTOR

• High Voltage Switching
• Low Power Amplifier Applications A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.31 rad. (0.012)
• Hermetic Ceramic Surface Mount Package A = 1.02 ± 0.10 (0.04 ± 0.004) LCC1 Underside View
Datasheet



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